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Electronic properties of a semiconducting oligomer/silicon (111) interface: Influence of silicon doping
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10.1063/1.1929073
/content/aip/journal/apl/86/22/10.1063/1.1929073
http://aip.metastore.ingenta.com/content/aip/journal/apl/86/22/10.1063/1.1929073
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

(a) and (b) XPS Si  and O  peaks of the Si(111) surface after the cleaning procedure. (c) Evolution of the normalized C  X-ray photoelectron spectra during the oligomer film growth.

Image of FIG. 2.
FIG. 2.

HeI ultraviolet photoelectron spectra of the Ooct-OPV5 film growth sequence. The bottom curve represents the clean Si(111) valence band. The determination of the is presented in the inset.

Image of FIG. 3.
FIG. 3.

Energy level diagrams: (a) Ooct-OPV5/Si(111) (-doped) interface and (b) Ooct-OPV5/Si(111) (-doped) interface.

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/content/aip/journal/apl/86/22/10.1063/1.1929073
2005-05-24
2014-04-20
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Electronic properties of a semiconducting oligomer/silicon (111) interface: Influence of silicon doping
http://aip.metastore.ingenta.com/content/aip/journal/apl/86/22/10.1063/1.1929073
10.1063/1.1929073
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