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Observation of large electron drift velocities in InN by ultrafast Raman spectroscopy
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10.1063/1.1931048
/content/aip/journal/apl/86/22/10.1063/1.1931048
http://aip.metastore.ingenta.com/content/aip/journal/apl/86/22/10.1063/1.1931048
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Figures

Image of FIG. 1.
FIG. 1.

A typical nonequilibrium electron distribution for an InN film grown on GaN. (The electric-field intensity has been estimated from a way similar to Ref. 2.) The photoexcited electron-hole pair density is . The excitation laser has a pulse width of . The excitation photon energy is . The cut-off electron velocity is around .

Image of FIG. 2.
FIG. 2.

A typical nonequilibrium electron distribution for an InN film grown on GaN. (The electric-field intensity has been estimated from a way similar to Ref. 2.) The photoexcited electron-hole pair density is . The excitation laser has a pulse width of . The excitation photon energy is .

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/content/aip/journal/apl/86/22/10.1063/1.1931048
2005-05-24
2014-04-20
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Observation of large electron drift velocities in InN by ultrafast Raman spectroscopy
http://aip.metastore.ingenta.com/content/aip/journal/apl/86/22/10.1063/1.1931048
10.1063/1.1931048
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