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(a) UHV STM image of a Si (111) surface after deposition of 1 ML of Fe at RT followed by annealing at 500 °C for 15 min and then 650 °C for 20 min. Nanostructures are observed at step pinning sites. (b) Close-up of (a) showing alignment of a nanostructure along one of the Si directions.
UHV STM image of the sample shown in Fig. 1 after annealing at 500 °C for 15 min and before annealing at 650 °C. Observed are thin metastable layers that have a reconstruction. The layers are separated by amorphous regions.
AFM image of a Si (111) surface after deposition of 6 ML of Fe at RT followed by annealing at 500 °C for 12 h and then 850 °C for 1 h.
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