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Critical precipitate size revisited and implications for oxygen precipitation in silicon
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10.1063/1.1940140
/content/aip/journal/apl/86/22/10.1063/1.1940140
http://aip.metastore.ingenta.com/content/aip/journal/apl/86/22/10.1063/1.1940140
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Figures

Image of FIG. 1.
FIG. 1.

Simulation of the evolution of the self-interstitial emission as a function of oxide precipitate size at 600 and 800 °C. At 600 °C, after reaching a cluster size of a few hundred molecules, most of the created self-interstitials are dissolved in the oxide precipitate itself. At 800 °C, the situation is completely reversed and most of the self-interstitials are now emitted into the silicon matrix.

Image of FIG. 2.
FIG. 2.

Interstitial oxygen supersaturation (a) at 600 and 800 °C in the bulk and at the precipitate/matrix interface both for the Senkader model (see Ref. 4) and taking into account segregation (this work). The self-interstitial supersaturation at the interface (b) assuming a supersaturation of a factor of 10 in the bulk.

Image of FIG. 3.
FIG. 3.

Number of emitted self-interstitials per precipitated oxygen atom and linear misfit (a) and critical radii (b) calculated for an oblate spheroidal precipitate with aspect ratio .

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/content/aip/journal/apl/86/22/10.1063/1.1940140
2005-05-24
2014-04-17
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Critical precipitate size revisited and implications for oxygen precipitation in silicon
http://aip.metastore.ingenta.com/content/aip/journal/apl/86/22/10.1063/1.1940140
10.1063/1.1940140
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