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Spatially resolved cathodoluminescence of GaN nanostructures fabricated by photoelectrochemical etching
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10.1063/1.1940734
/content/aip/journal/apl/86/22/10.1063/1.1940734
http://aip.metastore.ingenta.com/content/aip/journal/apl/86/22/10.1063/1.1940734
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

SEM images taken in different areas of an etched GaN layer showing columnar structures (a), branches of nanowires stemming from the bottom of the columns (b,c) and islands with coral-like relief (d).

Image of FIG. 2.
FIG. 2.

SE image (left) and corresponding panchromatic CL micrograph (right) of a PEC etched GaN film.

Image of FIG. 3.
FIG. 3.

Low magnification CL spectra, recorded using an accelerating voltage of 7 kV, from a PEC etched GaN layer (solid line) and an as-grown epilayer (dashed line). The inset shows a detail of the near-band gap CL emission from both samples.

Image of FIG. 4.
FIG. 4.

SE (left) and corresponding CL image (right) of a PEC etched GaN layer. CL spectra recorded in particular luminescent nanostructures marked in the image are displayed around the micrographs.

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/content/aip/journal/apl/86/22/10.1063/1.1940734
2005-05-24
2014-04-17
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Spatially resolved cathodoluminescence of GaN nanostructures fabricated by photoelectrochemical etching
http://aip.metastore.ingenta.com/content/aip/journal/apl/86/22/10.1063/1.1940734
10.1063/1.1940734
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