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SEM images taken in different areas of an etched GaN layer showing columnar structures (a), branches of nanowires stemming from the bottom of the columns (b,c) and islands with coral-like relief (d).
SE image (left) and corresponding panchromatic CL micrograph (right) of a PEC etched GaN film.
Low magnification CL spectra, recorded using an accelerating voltage of 7 kV, from a PEC etched GaN layer (solid line) and an as-grown epilayer (dashed line). The inset shows a detail of the near-band gap CL emission from both samples.
SE (left) and corresponding CL image (right) of a PEC etched GaN layer. CL spectra recorded in particular luminescent nanostructures marked in the image are displayed around the micrographs.
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