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vs positron implantation energy, and mean positron implantation depth, for -type Si (100), -C film grown on Si, and -C:H films grown on Si with increasing thickness (Nos. 1–8 samples set). scale is reported on the left and on the right for odd and even samples, respectively. The interfaces are marked with a vertical line. The continuous line is the best fit based on the positron diffusion equation.
Width of the defective layer in the Si substrate beyond the carbon film/Si interface, and compressive stress for the Nos. 1–8 -C:H samples set. Full star: stress for 120-nm-thick -C film.
vs positron implantation energy for Nos. 1, 6, 8 -C:H samples. Full symbols: measured on freshly deposited samples; open symbols: after 2 years aging. The interface is marked with a vertical line.
Characteristic Doppler broadened ratio curves for positron annihilating into defects in the defected Si layer for Nos. 1, 6, 8, and -C samples. The error, associated to the extraction of the characteristic curves from the data, is reported on No. 6.
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