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Channeling RBS spectra of the Sb-doped Si, obtained by using 2-MeV along the axis, as a function of incident angle. The insert shows the Sb profile (deepest) changes due to the tilting.
Extracted ratio of channeling to random stopping power of 2-MeV ions as a function of tilt angle along the axis (a), and as a function of yield (b).
Channeling and random spectra of the Sb-doped Si obtained by using 2-MeV ions (a) and 0.6-MeV ions (b).
Ratio of channeling to random stopping loss of ions along the axis as a function of incident energy in the well channeled direction .
Comparison of Sb profiles obtained from channeling RBS using either 2- or 0.6-MeV ions, along the axis. The arrow indicates the Sb location measured from TEM.
He stopping powers and half wavelengths vs He energies.
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