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Dependence of gate leakage current and subthreshold characteristics on various Hf-based gate stack structures. In this measurement, the gate length (Lg) and the gate width of the transistors used were 75 nm and , and the applied voltages between the drain and the source were and for the and MOSFETs, respectively. The dotted (⋯⋯⋯.) and the solid lines (—) show the gate leakage current and subthreshold characteristics of films only 2.5 nm thick and gate stack structures, respectively.
Effective mobility curves of Hf-based gate stack structures for MOS (a) and MOSFETs (b). The effective mobility curves of 1.6 nm SiON films and universal curves are shown as reference for both MOS and MOSFETs.
Charge pumping current (a) and the charge pumping current per gate pulse cycle (b) as a function of the gate pulse base level voltage (Vb) for an ALD HfSiON-3 (Hf 100%) gate stack structure in a MOSFET. The charge pumping current (Icp) is given by . Where is frequency of gate pulses (Hz), Qss is the surface state recombination charge per gate pulse cycle , Ag is gate area of the MOS transistor , is the electron charge (C), and Nit is the interfacial trap density . In this measurement, the gate length (Lg) and the gate width used were 0.5 and , respectively.
Interfacial trap density (Nit) in the Hf-based gate stack structures and 1.6 nm SiON films for both MOS and MOSFETs.
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