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core level photoemission spectra obtained from (a) a thin film of gold nitride produced by nitrogen reactive ion sputtering, (b) a thin film of gold nitride produced by the plasma method, and (c) a Au(110) surface exposed to a nitrogen ion dose of at 500 eV ion energy from Ref. 4. All spectra were obtained in normal emission geometry.
Variation of (a) hardness and (b) contact modulus with contact depth determined by the method of Oliver and Pharr (Ref. 9) for gold, gold nitride, and gold nitride annealed at 100 °C (rhomb, squares, and triangles, respectively). The data presented are not influenced by the substrate. (c) AFM images of an indent in (a) gold and (b) gold nitride showing pile up and the need for correction of as-measured hardness and modulus values.
Resistivity variation as a function of temperature for a thick gold film containing gold nitride produced by reactive ion sputtering (squares). Resistivity dependence of a gold film, thickness , over the same temperature range (circles).
Hardness and contact modulii for the samples.
Calculated elastic properties of gold from single crystal parameters.
Apparent grain size of gold and gold nitride layers from AFM scans of the sample surface.
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