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Nickel-silicide phase effects on flatband voltage shift and equivalent oxide thickness decrease of hafnium silicon oxynitride metal-silicon-oxide capacitors
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10.1063/1.1942633
/content/aip/journal/apl/86/22/10.1063/1.1942633
http://aip.metastore.ingenta.com/content/aip/journal/apl/86/22/10.1063/1.1942633
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Figures

Image of FIG. 1.
FIG. 1.

(a) characteristics for HfSiON structures with different Ni-silicide phases. For HfSiON structures, as the thickness of Ni is increased, the accumulation capacitance was increased and the flatband voltage was shifted to positive direction. (b) characteristics for structures with different Ni-silicide phases. There is no increase of capacitance as Ni thickness varies for the control and (data not shown) samples. The flatband voltage shift was negligible.

Image of FIG. 2.
FIG. 2.

XRD plots for Ni silicide formed by the different thicknesses of Ni film. XRD analyses show that the main NiSi (020) peak was dramatically decreased in the -thick Ni film structure. As the Ni layer is increased, the Si-consumed process dominated the whole silicide formation; and the preferred phase of Ni silicide near the gate/HfSiON interface was .

Image of FIG. 3.
FIG. 3.

Plot of EOT and as a function of Ni thickness. As the thickness of Ni film is increased, the flatband voltage of HfSiON is close to that of . In partially silicided Ni film samples, is close to those of samples. The ratios of capacitance represent that control and structures are fairly constant, independent of the NiSi phase variations.

Image of FIG. 4.
FIG. 4.

TEM images for HfSiON dielectrics. (a) TEM image for partially silicided structure . (b) TEM image for fully silicided structure . There is no thickness change of HfSiON as the thickness of Ni increases. Also the inset shows that HfSiON was transformed to a -like phase.

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/content/aip/journal/apl/86/22/10.1063/1.1942633
2005-05-26
2014-04-18
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Nickel-silicide phase effects on flatband voltage shift and equivalent oxide thickness decrease of hafnium silicon oxynitride metal-silicon-oxide capacitors
http://aip.metastore.ingenta.com/content/aip/journal/apl/86/22/10.1063/1.1942633
10.1063/1.1942633
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