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(a) characteristics for HfSiON structures with different Ni-silicide phases. For HfSiON structures, as the thickness of Ni is increased, the accumulation capacitance was increased and the flatband voltage was shifted to positive direction. (b) characteristics for structures with different Ni-silicide phases. There is no increase of capacitance as Ni thickness varies for the control and (data not shown) samples. The flatband voltage shift was negligible.
XRD plots for Ni silicide formed by the different thicknesses of Ni film. XRD analyses show that the main NiSi (020) peak was dramatically decreased in the -thick Ni film structure. As the Ni layer is increased, the Si-consumed process dominated the whole silicide formation; and the preferred phase of Ni silicide near the gate/HfSiON interface was .
Plot of EOT and as a function of Ni thickness. As the thickness of Ni film is increased, the flatband voltage of HfSiON is close to that of . In partially silicided Ni film samples, is close to those of samples. The ratios of capacitance represent that control and structures are fairly constant, independent of the NiSi phase variations.
TEM images for HfSiON dielectrics. (a) TEM image for partially silicided structure . (b) TEM image for fully silicided structure . There is no thickness change of HfSiON as the thickness of Ni increases. Also the inset shows that HfSiON was transformed to a -like phase.
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