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treatment-induced formation of a CdSe surface layer on thin-film solar cell absorbers
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View: Figures


Image of FIG. 1.
FIG. 1.

photoemission line (left) and Auger signal (right) as found on a -treated CGSe sample. For the latter, the range of reference positions (see Refs. 11 and 12) for several Cd compounds is also indicated.

Image of FIG. 2.
FIG. 2.

(a), (b), and (c) photoemission lines measured at different excitation energies . All spectra are presented on the same intensity scale. After removal of a linear background they were normalized by the excitation intensity and the respective photoionization cross sections (see Ref. 13).

Image of FIG. 3.
FIG. 3.

(a) and ratios, calculated from the spectra shown in Fig. 2 as a function of the applied excitation energy. At the top, the corresponding escape depth is indicated. (b) Ratio of the two contributions to the line versus the escape depth of the respective photoelectrons. The solid line represents the fit of the data to determine the thickness of the CdSe surface layer. At the top, the corresponding excitation energy is indicated at which the respective spectra (Fig. 2) were recorded.


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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Cd2+∕NH3 treatment-induced formation of a CdSe surface layer on CuGaSe2 thin-film solar cell absorbers