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Preparation of highly conductive Mn-doped thin films with spin polarization at room temperature using a pulsed-laser deposition technique
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10.1063/1.1942640
/content/aip/journal/apl/86/22/10.1063/1.1942640
http://aip.metastore.ingenta.com/content/aip/journal/apl/86/22/10.1063/1.1942640
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

(Color). XRD pattern of ( or 0.1) thin films on (0001) substrates at and . The inset shows the XRD pattern of (, or 0.1) thin films fabricated at and .

Image of FIG. 2.
FIG. 2.

(Color). Dependence of electrical resistivity on temperature for (, 0.1, or 0.5) thin films. The films were deposited on MgO (100) substrates at and .

Image of FIG. 3.
FIG. 3.

(Color). Dependence of magnetization on magnetic field for (, 0.1, or 0.5) thin films. Films were deposited on MgO (100) substrates at and . The inset shows the dependence of magnetization on temperature under a magnetic field of along the in-plane direction.

Image of FIG. 4.
FIG. 4.

(Color). (a) Dependence of Hall resistance on magnetic field at RT for (, 0.1, or 0.5) thin films. Films were deposited on MgO (100) substrates at and . The inset shows a magnified Hall resistance curve in the low magnetic field region, (b) dependence of carrier concentration and mobility on Mn doping ratio for (, 0.1, or 0.5) thin films determined using an ordinary Hall resistance term ( at high magnetic field).

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/content/aip/journal/apl/86/22/10.1063/1.1942640
2005-05-25
2014-04-16
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Preparation of highly conductive Mn-doped Fe3O4 thin films with spin polarization at room temperature using a pulsed-laser deposition technique
http://aip.metastore.ingenta.com/content/aip/journal/apl/86/22/10.1063/1.1942640
10.1063/1.1942640
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