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High-mobility nanocrystalline silicon thin-film transistors fabricated by plasma-enhanced chemical vapor deposition
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10.1063/1.1942641
/content/aip/journal/apl/86/22/10.1063/1.1942641
http://aip.metastore.ingenta.com/content/aip/journal/apl/86/22/10.1063/1.1942641
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

SIMS depth profiles for hydrogen and oxygen concentration as a function of nc-Si:H film thickness.

Image of FIG. 2.
FIG. 2.

Dark conductivity and Raman crystalline volume fraction as a function of nc-Si:H film thickness.

Image of FIG. 3.
FIG. 3.

Schematic cross section of a top-gate staggered nc-Si:H TFT.

Image of FIG. 4.
FIG. 4.

Output characteristics at a gate-source voltage of for TFT channel lengths of 20, 50, 100, and with a constant channel width of .

Image of FIG. 5.
FIG. 5.

Transfer and transconductance characteristics at a drain-source voltage of for the same family of TFTs depicted in Fig. 4.

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/content/aip/journal/apl/86/22/10.1063/1.1942641
2005-05-24
2014-04-19
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: High-mobility nanocrystalline silicon thin-film transistors fabricated by plasma-enhanced chemical vapor deposition
http://aip.metastore.ingenta.com/content/aip/journal/apl/86/22/10.1063/1.1942641
10.1063/1.1942641
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