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SIMS depth profiles for hydrogen and oxygen concentration as a function of nc-Si:H film thickness.
Dark conductivity and Raman crystalline volume fraction as a function of nc-Si:H film thickness.
Schematic cross section of a top-gate staggered nc-Si:H TFT.
Output characteristics at a gate-source voltage of for TFT channel lengths of 20, 50, 100, and with a constant channel width of .
Transfer and transconductance characteristics at a drain-source voltage of for the same family of TFTs depicted in Fig. 4.
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