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Deep impurity transitions involving cation vacancies and complexes in AlGaN alloys
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10.1063/1.1943489
/content/aip/journal/apl/86/22/10.1063/1.1943489
http://aip.metastore.ingenta.com/content/aip/journal/apl/86/22/10.1063/1.1943489
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

Room temperature PL spectra of a set of undoped epilayers with relatively low impurity concentrations , including both the band edge and deep impurity transitions associated with YL in GaN.

Image of FIG. 2.
FIG. 2.

Room temperature PL spectra of a set epilayers with higher impurity concentrations, including both the band edge and deep impurity transitions associated with VL in AlN.

Image of FIG. 3.
FIG. 3.

PL peak positions of deep impurity transitions obtained from Fig. 1 (closed squares) and 2 (open circles) as functions of . The peak positions of the YL in GaN and VL in AlN are also indicated. The solid lines are guide to the eyes.

Image of FIG. 4.
FIG. 4.

Acceptor levels obtained from Fig. 1 (closed squares) and 2 (open circles) as functions of . and are also included with being the shallow donor level. The valence band maximum of GaN is chosen as . The YL in GaN and VL in AlN are also indicated.

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/content/aip/journal/apl/86/22/10.1063/1.1943489
2005-05-26
2014-04-19
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Deep impurity transitions involving cation vacancies and complexes in AlGaN alloys
http://aip.metastore.ingenta.com/content/aip/journal/apl/86/22/10.1063/1.1943489
10.1063/1.1943489
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