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Unidirectional self-assembling of SiGe Stranski-Krastanow islands on Si(113)
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Image of FIG. 1.
FIG. 1.

Detailed atomic force micrograph of the homoepitaxial Si(113) surface (a) depicts a regular groove-like pattern which consists of alternating (111) and (116) facets, whereas the micrographs (c) and (d) were taken after the SiGe heteroepitaxy along and perpendicular to the initial groove structure, respectively. The realized inclination angles indicate the presence of three {111} and a single facet; (b) shows a stereographic projection on the (113) surface comprising the relevant crystallographic directions.

Image of FIG. 2.
FIG. 2.

Linear pattern of the homoepitaxial Si(113) surface (a) enforces the unidirectional self-assembling of subsequently grown SiGe islands along the direction (c); respective fast Fourier transformations are shown in (b) and (d). The correlation peak P1 proves lateral self-assembling of alternating facets whereas satellite P2 shifts toward smaller values, respectively, larger island–island distances perpendicular to the grooves compared with the initial surface. Since the islands moreover self-assemble into the grooves, an additional satellite P3 appears.

Image of FIG. 3.
FIG. 3.

Finite element calculation of the normalized lateral (a) and vertical (b) displacement field in the vicinity of a SiGe island placed on a faceted Si(113) substrate. The lateral displacement shows nearly a symmetric behavior with respect to the central groove (a). Consequently the lattice relaxes outwards within the central row and will be depressed inwards within the adjacent rows (b).


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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Unidirectional self-assembling of SiGe Stranski-Krastanow islands on Si(113)