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Pure-edge dislocation network for strain-relaxed systems
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Image of FIG. 1.
FIG. 1.

Plan-view dark-field TEM images of (a) as-grown, (b) annealed, and (c) annealed -thick samples. Annealing duration was . These images were taken by the weak-beam method under the condition of with ; (d) plan-view bright-field TEM image taken from the same area as (c), showing the network morphology of pure-edge dislocations. The image was taken under the condition that the incident electron beam is slightly tilted to the [400] direction from the on-axis [001] direction.

Image of FIG. 2.
FIG. 2.

SIMS depth profiles of Ge in samples after HTA at 950, 1000, and for in a ambient.

Image of FIG. 3.
FIG. 3.

Plan-view TEM images of samples after HTA at (a) ; (b) ; and (c) . These images were taken under the same condition as that shown in Fig. 1(d); (d) cross-sectional TEM image of the sample shown in (c). Inset shows a closeup high-resolution TEM image of an end-on dislocation indicated by a lower arrow head.

Image of FIG. 4.
FIG. 4.

{110} lattice spacings of SiGe layers as a function of HTA temperature. Three sets of data are shown; the {110} lattice spacings measured by XRD two-dimensional reciprocal space mapping, those derived from the spacings of pure-edge dislocations observed in the plan-view TEM images shown in Fig. 3, and those calculated for nonstrained SiGe crystals with average Ge concentrations obtained from SIMS data shown in Fig. 2.


Generic image for table
Table I.

Percentage of defects in the samples observed in the range over as a function of PDA conditions. Defect characters were determined by cross-sectional high-resolution TEM.


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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Pure-edge dislocation network for strain-relaxed SiGe∕Si(001) systems