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Effects of thin GaAs insertion layer on quantum dots grown by metalorganic chemical vapor deposition
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10.1063/1.1943494
/content/aip/journal/apl/86/22/10.1063/1.1943494
http://aip.metastore.ingenta.com/content/aip/journal/apl/86/22/10.1063/1.1943494
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

(a) AFM images of the InAs QDs grown on buffer layer (b) and the InAs QDs covered with 10 ML GaAs.

Image of FIG. 2.
FIG. 2.

PL spectra of the QDs with different thickness of the GaAs insertion layers. The top InGaAs capping layer was grown at (a) , and (b) .

Image of FIG. 3.
FIG. 3.

(a) Geometries of 5 ML GaAs insertion layers and InAs QD with width and height; (b) calculated energy levels of QDs without GaAs insertion layer (leftmost) and with GaAs insertion layer (rightmost). Two columns in the middle show the separate effect of barrier height and strain by the GaAs insertion layer, respectively.

Image of FIG. 4.
FIG. 4.

PL spectra of the QDs with different thickness of the GaAs insertion layer. The top InP capping layer was grown at . The inset shows emission at room temperature using 7.5 ML GaAs insertion layer

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/content/aip/journal/apl/86/22/10.1063/1.1943494
2005-05-26
2014-04-18
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Effects of thin GaAs insertion layer on InAs∕(InGaAs)∕InP(001) quantum dots grown by metalorganic chemical vapor deposition
http://aip.metastore.ingenta.com/content/aip/journal/apl/86/22/10.1063/1.1943494
10.1063/1.1943494
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