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(a) AFM images of the InAs QDs grown on buffer layer (b) and the InAs QDs covered with 10 ML GaAs.
PL spectra of the QDs with different thickness of the GaAs insertion layers. The top InGaAs capping layer was grown at (a) , and (b) .
(a) Geometries of 5 ML GaAs insertion layers and InAs QD with width and height; (b) calculated energy levels of QDs without GaAs insertion layer (leftmost) and with GaAs insertion layer (rightmost). Two columns in the middle show the separate effect of barrier height and strain by the GaAs insertion layer, respectively.
PL spectra of the QDs with different thickness of the GaAs insertion layer. The top InP capping layer was grown at . The inset shows emission at room temperature using 7.5 ML GaAs insertion layer
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