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Ultraviolet photovoltage characteristics of heterojunction
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View: Figures


Image of FIG. 1.
FIG. 1.

characteristic of a junction diode at . The voltage polarity is defined at the electrode on Si side. The schematic circuit of the sample measurement is shown in the inset.

Image of FIG. 2.
FIG. 2.

Schematic band structure for junction. The inset is the amplified part near the spike of the interface.

Image of FIG. 3.
FIG. 3.

Typical voltage response of junction to pulsed laser irradiation. The solid line shows the fitting result using Eq. (1). The inset displays the fast response to laser pulse with a resistance connected in parallel across the junction. denotes the peak value of the transient voltage. The sketch shows the schematic circuit of the sample measurement.

Image of FIG. 4.
FIG. 4.

(a) Peak values of transient current and (b) as functions of the input impedance connected in parallel across the junction. The insets summary the short-circuit current and open-circuit voltage as functions of the irradiated area . Numbers in the figure denote the values. The solid lines are guides for the eye.


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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Ultraviolet photovoltage characteristics of SrTiO3−δ∕Si heterojunction