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Typical electron energy loss spectrum manifesting the chemical purity of the Si-in- deposits. No trace of oxygen contamination can be inferred from this spectrum.
Transmission electron micrograph of the Si-in- sample with an overall atomic ratio in the as-deposited condition. It manifests a significant homogeneity for the particle size falling within 2.2–2.6 nm with rare exceptions. Here two particles larger than 5 nm can be identified owing to the occasional conglomeration of small ones, since the particle density has approached its possible extreme value.
(Color online) PL of the Si-in- deposit with an overall atomic ratio plotted against that from a single crystalline GaN sample. Inset shows the digital photo of the two films under illumination of a 6-W ultraviolet lamp. The Si-in- sample (left) is in blue.
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