1887
banner image
No data available.
Please log in to see this content.
You have no subscription access to this content.
No metrics data to plot.
The attempt to load metrics for this article has failed.
The attempt to plot a graph for these metrics has failed.
Epitaxial growth of in a decanano contact opening on a (100) silicon substrate
Rent:
Rent this article for
USD
10.1063/1.1943500
/content/aip/journal/apl/86/22/10.1063/1.1943500
http://aip.metastore.ingenta.com/content/aip/journal/apl/86/22/10.1063/1.1943500
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

Cross-sectional schematic of a 45-nm-wide contact opening made between gate patterns using self-aligned contact processing.

Image of FIG. 2.
FIG. 2.

(a) Cross-sectional TEM images of Co and capping TiN films deposited on the bottom of the contact opening and (b) Co silicide formed after being annealed using RTP at 750 °C for 30 s in a atmosphere. The micrographs were taken from the [011] direction and the area shown is the portion designated by in Fig. 1.

Image of FIG. 3.
FIG. 3.

(a) Electron diffraction pattern taken from [011] direction at the interface between the Co silicide and the Si substrate and high resolution images of the selected areas marked as (b) and (c) in Fig. 2.

Image of FIG. 4.
FIG. 4.

Cross-sectional schematic of the contact opening that illustrates the progress of silicidation.

Loading

Article metrics loading...

/content/aip/journal/apl/86/22/10.1063/1.1943500
2005-05-27
2014-04-21
Loading

Full text loading...

This is a required field
Please enter a valid email address
752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Epitaxial growth of CoSi2 in a decanano contact opening on a (100) silicon substrate
http://aip.metastore.ingenta.com/content/aip/journal/apl/86/22/10.1063/1.1943500
10.1063/1.1943500
SEARCH_EXPAND_ITEM