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Cross-sectional schematic of a 45-nm-wide contact opening made between gate patterns using self-aligned contact processing.
(a) Cross-sectional TEM images of Co and capping TiN films deposited on the bottom of the contact opening and (b) Co silicide formed after being annealed using RTP at 750 °C for 30 s in a atmosphere. The micrographs were taken from the  direction and the area shown is the portion designated by in Fig. 1.
(a) Electron diffraction pattern taken from  direction at the interface between the Co silicide and the Si substrate and high resolution images of the selected areas marked as (b) and (c) in Fig. 2.
Cross-sectional schematic of the contact opening that illustrates the progress of silicidation.
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