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Relaxation processes in strained Si layers on silicon-germanium- on-insulator substrates
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10.1063/1.1944208
/content/aip/journal/apl/86/22/10.1063/1.1944208
http://aip.metastore.ingenta.com/content/aip/journal/apl/86/22/10.1063/1.1944208
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Figures

Image of FIG. 1.
FIG. 1.

A series of plan-view TEM micrographs of strained-Si–SGOI with Si layers of (a) 5 nm, (b) 10 nm, (c) 15 nm, and (d) 25 nm in thickness. In the underlying films, ranged from 0.37 to 0.38 and from 0.26 to 0.29, with the tensile strain in strained-Si films being approximately 1.1%–1.2 %.

Image of FIG. 2.
FIG. 2.

A typical cross-sectional TEM micrograph of a strained-Si–SGOI substrate. The thicknesses of strained-Si and layers were 25 and 75 nm, respectively. Also, and in the films were 0.38 and 0.29, respectively. The arrows denote plane defects, extending from the surface to the interface.

Image of FIG. 3.
FIG. 3.

A high resolution lattice image in the [110] projection of the plane defect around the interface. The Shockley partial dislocation core with a Burgers vector of is visible at the interface.

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/content/aip/journal/apl/86/22/10.1063/1.1944208
2005-05-27
2014-04-23
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Relaxation processes in strained Si layers on silicon-germanium- on-insulator substrates
http://aip.metastore.ingenta.com/content/aip/journal/apl/86/22/10.1063/1.1944208
10.1063/1.1944208
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