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Relaxation processes in strained Si layers on silicon-germanium- on-insulator substrates
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10.1063/1.1944208
/content/aip/journal/apl/86/22/10.1063/1.1944208
http://aip.metastore.ingenta.com/content/aip/journal/apl/86/22/10.1063/1.1944208
/content/aip/journal/apl/86/22/10.1063/1.1944208
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/content/aip/journal/apl/86/22/10.1063/1.1944208
2005-05-27
2014-11-27
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Relaxation processes in strained Si layers on silicon-germanium- on-insulator substrates
http://aip.metastore.ingenta.com/content/aip/journal/apl/86/22/10.1063/1.1944208
10.1063/1.1944208
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