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A series of plan-view TEM micrographs of strained-Si–SGOI with Si layers of (a) 5 nm, (b) 10 nm, (c) 15 nm, and (d) 25 nm in thickness. In the underlying films, ranged from 0.37 to 0.38 and from 0.26 to 0.29, with the tensile strain in strained-Si films being approximately 1.1%–1.2 %.
A typical cross-sectional TEM micrograph of a strained-Si–SGOI substrate. The thicknesses of strained-Si and layers were 25 and 75 nm, respectively. Also, and in the films were 0.38 and 0.29, respectively. The arrows denote plane defects, extending from the surface to the interface.
A high resolution lattice image in the  projection of the plane defect around the interface. The Shockley partial dislocation core with a Burgers vector of is visible at the interface.
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