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Characterization of -plasma fluorinated gate dielectrics with TaN metal gate
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10.1063/1.1944230
/content/aip/journal/apl/86/22/10.1063/1.1944230
http://aip.metastore.ingenta.com/content/aip/journal/apl/86/22/10.1063/1.1944230
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

The curves (gate leakage current) for all samples. The gate leakage current was decreased for the sample with plasma treatment. The same tendency was evident for the samples with post deposition annealing.

Image of FIG. 2.
FIG. 2.

The normalized hysteresis curves for all samples without PDA. The inset figure is the Weibull distribution for hysteresis. The hysteresis was improved for the sample with plasma treatment.

Image of FIG. 3.
FIG. 3.

The SIMS depth profile of fluorine atoms for all samples. The fluorine atoms distributed in gate dielectrics and show two peaks in the interface between and .

Image of FIG. 4.
FIG. 4.

Hf ESCA spectra of (a) as-deposited sample, and (b) plasma treated 5 min sample, respectively. A take-off angle (TOA) of 90° was used to measure the ESCA spectra.

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/content/aip/journal/apl/86/22/10.1063/1.1944230
2005-05-26
2014-04-24
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Characterization of CF4-plasma fluorinated HfO2 gate dielectrics with TaN metal gate
http://aip.metastore.ingenta.com/content/aip/journal/apl/86/22/10.1063/1.1944230
10.1063/1.1944230
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