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The curves (gate leakage current) for all samples. The gate leakage current was decreased for the sample with plasma treatment. The same tendency was evident for the samples with post deposition annealing.
The normalized hysteresis curves for all samples without PDA. The inset figure is the Weibull distribution for hysteresis. The hysteresis was improved for the sample with plasma treatment.
The SIMS depth profile of fluorine atoms for all samples. The fluorine atoms distributed in gate dielectrics and show two peaks in the interface between and .
Hf ESCA spectra of (a) as-deposited sample, and (b) plasma treated 5 min sample, respectively. A take-off angle (TOA) of 90° was used to measure the ESCA spectra.
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