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Optical micrographs of arrays of (a) right-handed gammadions and (b) left-handed gammadions etched in a layer of UVIII resist deposited on a double polished silicon substrate.
Schematic diagrams of the optical arrangements used to characterize the optical properties of dielectric planar chiral metamaterials.
The ellipticity (a) and polarization azimuth rotation (b) of visible light (632 nm) diffracted from arrays of left-(∎ order and ◻ order), and right-(▴ order and ▵ order) handed gammadions etched in a UVIII polymeric layer, plotted as a function of the polarization azimuth of the linearly polarized incident wave.
Relative intensity of the first-order beams diffracted from arrays of left-(∎ order and ◻ order) and right-(▴ order and ▵ order) handed gammadions etched in a 300 nm thick UVIII layer as a function of (a) azimuth angle of a linearly polarized incident beam, and (b) the ellipticity of the incident beam (with inset diagrams showing the evolution of the elliptical beam).
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