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Electromigration-induced grain rotation in anisotropic conducting beta tin
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10.1063/1.1941456
/content/aip/journal/apl/86/24/10.1063/1.1941456
http://aip.metastore.ingenta.com/content/aip/journal/apl/86/24/10.1063/1.1941456
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

Schematic diagram of grain 2 with “bad” orientation between grain 1 and 3 which have “good” orientation. The height of the grain is “h,” the width is “d,” and the width of grain boundaries is “.” Inside the grain boundaries, “v” stands for vacancies and the arrows indicate the direction of vacancy flows.

Image of FIG. 2.
FIG. 2.

(a) Sn strip under electromigration at the current density of at 100 °C for 30 h. (b) morphology of the strip shows grains rotation after the electromigration for 500 h.

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/content/aip/journal/apl/86/24/10.1063/1.1941456
2005-06-06
2014-04-23
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Electromigration-induced grain rotation in anisotropic conducting beta tin
http://aip.metastore.ingenta.com/content/aip/journal/apl/86/24/10.1063/1.1941456
10.1063/1.1941456
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