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Multiple-band-edge quantum-well intermixing in the material system
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10.1063/1.1946903
/content/aip/journal/apl/86/24/10.1063/1.1946903
http://aip.metastore.ingenta.com/content/aip/journal/apl/86/24/10.1063/1.1946903

Figures

Image of FIG. 1.
FIG. 1.

Epitaxial base structure with either MQW or MQW active region, and GaAs or InGaP implant buffer layer.

Image of FIG. 2.
FIG. 2.

Photoluminescence peak wavelength shift vs RTA temperature for nonimplanted base structures. Sample A MQW with a GaAs cap (circles), sample B MQW with a InGaP cap (squares), sample C MQW with a GaAs cap (triangles), sample D MQW with an InGaP cap (diamonds), and sample E MQW with a InGaP cap (stars).

Image of FIG. 3.
FIG. 3.

Photoluminescence peak wavelength shift vs RTA temperature for implanted base structures. Sample D MQW with a InGaP cap (circles), sample E MQW with a InGaP cap (squares), and sample E with an InGaP cap removed prior to annealing (triangles).

Image of FIG. 4.
FIG. 4.

Isothermal, , photoluminescence peak wavelength shift as a function of RTA time demonstrating multiple band edges using a single-ion implant. Symbols indicate nonimplanted (circles), implanted (triangles), and samples with partial anneal followed by the removal of the implant buffer layer (squares) followed by further anneals.

Tables

Generic image for table
Table I.

Epitaxial base structures used in the intermixing experiments. Samples A through D use an implant buffer layer thickness of ; sample E uses a implant buffer layer. Samples A through D use a MQW consisting of wells and barriers, while sample E uses wells and barriers.

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/content/aip/journal/apl/86/24/10.1063/1.1946903
2005-06-09
2014-04-24
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Multiple-band-edge quantum-well intermixing in the InGaAs∕InGaAsP∕InGaP material system
http://aip.metastore.ingenta.com/content/aip/journal/apl/86/24/10.1063/1.1946903
10.1063/1.1946903
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