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Epitaxial base structure with either MQW or MQW active region, and GaAs or InGaP implant buffer layer.
Photoluminescence peak wavelength shift vs RTA temperature for nonimplanted base structures. Sample A MQW with a GaAs cap (circles), sample B MQW with a InGaP cap (squares), sample C MQW with a GaAs cap (triangles), sample D MQW with an InGaP cap (diamonds), and sample E MQW with a InGaP cap (stars).
Photoluminescence peak wavelength shift vs RTA temperature for implanted base structures. Sample D MQW with a InGaP cap (circles), sample E MQW with a InGaP cap (squares), and sample E with an InGaP cap removed prior to annealing (triangles).
Isothermal, , photoluminescence peak wavelength shift as a function of RTA time demonstrating multiple band edges using a single-ion implant. Symbols indicate nonimplanted (circles), implanted (triangles), and samples with partial anneal followed by the removal of the implant buffer layer (squares) followed by further anneals.
Epitaxial base structures used in the intermixing experiments. Samples A through D use an implant buffer layer thickness of ; sample E uses a implant buffer layer. Samples A through D use a MQW consisting of wells and barriers, while sample E uses wells and barriers.
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