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Effect of threading dislocations on the Bragg peakwidths of GaN, AlGaN, and AlN heterolayers
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View: Figures


Image of FIG. 1.
FIG. 1.

Schematic diagram showing the real-space microstructure of a dislocated sample, the resulting reciprocal-space structure, and the skew diffraction geometry used to probe the reciprocal space: (a) Cross-sectional view of the sample and the diffraction plane, and (b) plan view of same.

Image of FIG. 2.
FIG. 2.

Least-squares fits of Eq. (1) to measured Bragg peakwidths for: (a) thick GaN with a threading-dislocation density of , and (b) thick AlN with a threading-dislocation density of .

Image of FIG. 3.
FIG. 3.

Recasting of the data and fits in Fig. 2(a) to show the relationship to (a) the traditional W–H model, and (b) -plots of lattice-rotation models (developed in Refs. 8 and 12).

Image of FIG. 4.
FIG. 4.

Comparison of threading-dislocation densities measured by XRD to those measured by TEM. The examined samples consist of GaN on (3 each), GaN on sapphire (2 each), on GaN∕sapphire (1 each), and on AlN∕sapphire (1 each). All samples are thick.


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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Effect of threading dislocations on the Bragg peakwidths of GaN, AlGaN, and AlN heterolayers