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Schematic diagram showing the real-space microstructure of a dislocated sample, the resulting reciprocal-space structure, and the skew diffraction geometry used to probe the reciprocal space: (a) Cross-sectional view of the sample and the diffraction plane, and (b) plan view of same.
Least-squares fits of Eq. (1) to measured Bragg peakwidths for: (a) thick GaN with a threading-dislocation density of , and (b) thick AlN with a threading-dislocation density of .
Recasting of the data and fits in Fig. 2(a) to show the relationship to (a) the traditional W–H model, and (b) -plots of lattice-rotation models (developed in Refs. 8 and 12).
Comparison of threading-dislocation densities measured by XRD to those measured by TEM. The examined samples consist of GaN on (3 each), GaN on sapphire (2 each), on GaN∕sapphire (1 each), and on AlN∕sapphire (1 each). All samples are thick.
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