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Silicon waveguide-integrated optical power monitor with enhanced sensitivity at
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10.1063/1.1947379
/content/aip/journal/apl/86/24/10.1063/1.1947379
http://aip.metastore.ingenta.com/content/aip/journal/apl/86/24/10.1063/1.1947379
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

Illustration of monolithically integrated in-line power monitor for in SOI, showing the junction separation and device length .

Image of FIG. 2.
FIG. 2.

Waveguide optical power loss as a function of device length (including fiber-to-chip coupling loss at the input facet).

Image of FIG. 3.
FIG. 3.

characteristics for a proton implanted and an unimplanted device (with and ).

Image of FIG. 4.
FIG. 4.

Photocurrent as a function of on-chip optical power for a proton implanted and an unimplanted device of dimensions and . The photoresponse, shown for both a broadband source and laser centered at , is significantly enhanced in the proton implanted device.

Image of FIG. 5.
FIG. 5.

Photocurrent as a function of junction separation , for and on-chip power of .

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/content/aip/journal/apl/86/24/10.1063/1.1947379
2005-06-07
2014-04-17
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Silicon waveguide-integrated optical power monitor with enhanced sensitivity at 1550nm
http://aip.metastore.ingenta.com/content/aip/journal/apl/86/24/10.1063/1.1947379
10.1063/1.1947379
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