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Illustration of monolithically integrated in-line power monitor for in SOI, showing the junction separation and device length .
Waveguide optical power loss as a function of device length (including fiber-to-chip coupling loss at the input facet).
characteristics for a proton implanted and an unimplanted device (with and ).
Photocurrent as a function of on-chip optical power for a proton implanted and an unimplanted device of dimensions and . The photoresponse, shown for both a broadband source and laser centered at , is significantly enhanced in the proton implanted device.
Photocurrent as a function of junction separation , for and on-chip power of .
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