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Enhanced annihilations of self-interstitial clusters by vacancies transported through vehicle action of Cu in Cu-implanted silicon crystals
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10.1063/1.1947383
/content/aip/journal/apl/86/24/10.1063/1.1947383
http://aip.metastore.ingenta.com/content/aip/journal/apl/86/24/10.1063/1.1947383
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

Change of PL spectrum with annealing temperature for -type Cz crystal implanted with Cu. The annealing temperatures are shown in the figure. The annealing time is 30 min.

Image of FIG. 2.
FIG. 2.

Change of PL spectrum with annealing temperature for -type FZ crystal implanted with Cu. The annealing temperatures are shown in the figure. The annealing time is 30 min. The arrows in (b) indicate the center peaks.

Image of FIG. 3.
FIG. 3.

Changes of PL intensities of the , and CP1.263 centers with annealing temperature for FZ (blackened symbols) and (open symbols) crystals implanted with Cu.

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/content/aip/journal/apl/86/24/10.1063/1.1947383
2005-06-07
2014-04-16
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Enhanced annihilations of self-interstitial clusters by vacancies transported through vehicle action of Cu in Cu-implanted silicon crystals
http://aip.metastore.ingenta.com/content/aip/journal/apl/86/24/10.1063/1.1947383
10.1063/1.1947383
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