Full text loading...
Measured fraction of implanted helium in silicon retained following a anneal at as a function of implant fluence and heating ramp rate. For fluences below the “critical” value of , retention depends strongly on the heating ramp rate. Uncertainty is on the order of the symbol size.
SEM micrograph showing typical helium bubble clusters observed in Si(100) samples implanted at and annealed at with a ramp rate of: (a) , (b) , and (c) . Sample surface is aligned horizontally in all micrographs. scale bars are shown.
SEM micrograph of a helium bubble cluster observed in a Si(100) sample implanted to and annealed at with a ramp rate of . scale bar is shown.
Article metrics loading...