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Effect of annealing temperature ramp rate on bubble formation in helium-implanted silicon
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10.1063/1.1947384
/content/aip/journal/apl/86/24/10.1063/1.1947384
http://aip.metastore.ingenta.com/content/aip/journal/apl/86/24/10.1063/1.1947384
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

Measured fraction of implanted helium in silicon retained following a anneal at as a function of implant fluence and heating ramp rate. For fluences below the “critical” value of , retention depends strongly on the heating ramp rate. Uncertainty is on the order of the symbol size.

Image of FIG. 2.
FIG. 2.

SEM micrograph showing typical helium bubble clusters observed in Si(100) samples implanted at and annealed at with a ramp rate of: (a) , (b) , and (c) . Sample surface is aligned horizontally in all micrographs. scale bars are shown.

Image of FIG. 3.
FIG. 3.

SEM micrograph of a helium bubble cluster observed in a Si(100) sample implanted to and annealed at with a ramp rate of . scale bar is shown.

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/content/aip/journal/apl/86/24/10.1063/1.1947384
2005-06-08
2014-04-21
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Effect of annealing temperature ramp rate on bubble formation in helium-implanted silicon
http://aip.metastore.ingenta.com/content/aip/journal/apl/86/24/10.1063/1.1947384
10.1063/1.1947384
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