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Fabrication of heterojunction light-emitting diodes by filtered cathodic vacuum arc technique
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10.1063/1.1947889
/content/aip/journal/apl/86/24/10.1063/1.1947889
http://aip.metastore.ingenta.com/content/aip/journal/apl/86/24/10.1063/1.1947889
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

Schematic diagram of the heterojunction LED structure.

Image of FIG. 2.
FIG. 2.

Solid lines: Current-voltage characteristics of the metallization on -SiC before and after rapid thermal annealing at 800 °C for 5 min. Dashed line: current-voltage characteristics of the Ni metallization on -ZnO:Al(7%).

Image of FIG. 3.
FIG. 3.

RT current-voltage and light-voltage characteristics of the heterojunction LED. The insert shows the enlarged current-voltage curve at reverse biased and the heterojunction model for the calculation of ideal factor.

Image of FIG. 4.
FIG. 4.

RT EL spectra of the heterojunction LED at various forward biased voltage.

Image of FIG. 5.
FIG. 5.

RT PL spectra of an annealed and a bare -SiC(4H) substrate under optical excitation by a frequency tripled Nd:YAG laser (355 nm) at pulsed operation (6 ns, 10 Hz). XRD pattern of the ZnO:Al(3%) film deposited on SiC substrate at 150 °C is also included.

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/content/aip/journal/apl/86/24/10.1063/1.1947889
2005-06-08
2014-04-20
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Fabrication of n-ZnO:Al∕p-SiC(4H) heterojunction light-emitting diodes by filtered cathodic vacuum arc technique
http://aip.metastore.ingenta.com/content/aip/journal/apl/86/24/10.1063/1.1947889
10.1063/1.1947889
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