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Schematic diagram of the heterojunction LED structure.
Solid lines: Current-voltage characteristics of the metallization on -SiC before and after rapid thermal annealing at 800 °C for 5 min. Dashed line: current-voltage characteristics of the Ni metallization on -ZnO:Al(7%).
RT current-voltage and light-voltage characteristics of the heterojunction LED. The insert shows the enlarged current-voltage curve at reverse biased and the heterojunction model for the calculation of ideal factor.
RT EL spectra of the heterojunction LED at various forward biased voltage.
RT PL spectra of an annealed and a bare -SiC(4H) substrate under optical excitation by a frequency tripled Nd:YAG laser (355 nm) at pulsed operation (6 ns, 10 Hz). XRD pattern of the ZnO:Al(3%) film deposited on SiC substrate at 150 °C is also included.
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