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(a) Current–voltage characteristics from room temperature down to 5 K. Inset: fabrication scheme of the lateral junction. (b) Electroluminescence spectra at different forward biases around the emission detecting threshold. Inset: Light–voltage characteristic of the planar LED at .
(a) Light–voltage characteristic of the planar LED without SAW (dashed line) and with SAW (solid line). SAW power and frequency were –10 dBm and 987.5 MHz, respectively. (b) Electroluminescence spectra without SAW (dashed line) and in presence of a SAW (–10 dBm, 987.5 MHz) (solid line). Inset: electroluminescence as a function of IDT excitation frequency (–9 dBm) at . The junction was forward biased with 1.8 V.
(a) EL time evolution in presence of SAW (987.5 MHz, –10 dBm), at and for a forward bias of 1.85 V. (b) Fourier transform of the top panel EL signal. Inset: Normalized oscillation intensity as a function of the forward bias. (c) Zoom of the time evolution of SAW-induced EL showed in (a) superimposed onto a fast Fourier transform smoothing.
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