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Photoresponse of heterojunction diodes grown by plasma-assisted molecular-beam epitaxy
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10.1063/1.1949730
/content/aip/journal/apl/86/24/10.1063/1.1949730
http://aip.metastore.ingenta.com/content/aip/journal/apl/86/24/10.1063/1.1949730
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

PL spectrum of the ZnO film grown on -type 6H–SiC substrates by MBE .

Image of FIG. 2.
FIG. 2.

Room-temperature characteristics of heterojunctions in both logarithmic and linear (inset on the right) scales. The inset on the left depicts the schematic of the energy band diagram of the heterostructure.

Image of FIG. 3.
FIG. 3.

Room-temperature spectral photoresponsivity of the photodiode illuminated both from the ZnO and 6H–SiC (inset) sides for various reverse biases.

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/content/aip/journal/apl/86/24/10.1063/1.1949730
2005-06-08
2014-04-19
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Photoresponse of n-ZnO∕p-SiC heterojunction diodes grown by plasma-assisted molecular-beam epitaxy
http://aip.metastore.ingenta.com/content/aip/journal/apl/86/24/10.1063/1.1949730
10.1063/1.1949730
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