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Cross-sectional bright-field micrographs of the InAs quantum dash samples A to E.
EEL spectra of the -edge for the QDash and the embedding material (bottom) of sample E. The upper part of the figure shows the -contrast micrograph indicating the corresponding measuring points.
QDash height and base width as a function of the nominal InAs layer thickness for various samples. The inset shows the ratio between QDash height and QDash width.
Normalized photoluminescence spectra for samples A, C, and E.
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