1887
banner image
No data available.
Please log in to see this content.
You have no subscription access to this content.
No metrics data to plot.
The attempt to load metrics for this article has failed.
The attempt to plot a graph for these metrics has failed.
Fine-structure N-polarity multiple quantum wells grown on GaN underlayer by molecular-beam epitaxy
Rent:
Rent this article for
USD
10.1063/1.1954877
/content/aip/journal/apl/86/26/10.1063/1.1954877
http://aip.metastore.ingenta.com/content/aip/journal/apl/86/26/10.1063/1.1954877

Figures

Image of FIG. 1.
FIG. 1.

Cross-sectional TEM images of MQWs and SQW (dark field, ): (a) Sample A: InN , InGaN , (b) sample B: InN , InGaN and (c) SQW,. The QWs were grown on a -thick GaN underlayer and capped by a GaN layer.

Image of FIG. 2.
FIG. 2.

(a) The XRD scans for (002) diffractions of MQWs. The solid and dashed lines indicate the experimental and simulated results, respectively. (b) Calculated critical thickness of InN wells as a function of In contents in bottom layer. Two circles show In contents and layer thicknesses estimated by TEM and XRD for samples A and B.

Image of FIG. 3.
FIG. 3.

PL spectra of InN MQWs (solid line) and a thickness InN epilayer (dashed line).

Tables

Generic image for table
Table I.

Structural parameters, the In contents in the InGaN barriers and lattice relaxations (i.e., strains) in the well/barrier determined from the simulation of scans. Lattice relaxation of the layer was defined by the percentage relaxation parallel to the interface as , where is the lattice constant of the layer. and are the lattice constant when the layer is fully relaxed and that of the bottom layer.

Loading

Article metrics loading...

/content/aip/journal/apl/86/26/10.1063/1.1954877
2005-06-20
2014-04-20
Loading

Full text loading...

This is a required field
Please enter a valid email address
752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Fine-structure N-polarity InN∕InGaN multiple quantum wells grown on GaN underlayer by molecular-beam epitaxy
http://aip.metastore.ingenta.com/content/aip/journal/apl/86/26/10.1063/1.1954877
10.1063/1.1954877
SEARCH_EXPAND_ITEM