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Fine-structure N-polarity multiple quantum wells grown on GaN underlayer by molecular-beam epitaxy
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Image of FIG. 1.
FIG. 1.

Cross-sectional TEM images of MQWs and SQW (dark field, ): (a) Sample A: InN , InGaN , (b) sample B: InN , InGaN and (c) SQW,. The QWs were grown on a -thick GaN underlayer and capped by a GaN layer.

Image of FIG. 2.
FIG. 2.

(a) The XRD scans for (002) diffractions of MQWs. The solid and dashed lines indicate the experimental and simulated results, respectively. (b) Calculated critical thickness of InN wells as a function of In contents in bottom layer. Two circles show In contents and layer thicknesses estimated by TEM and XRD for samples A and B.

Image of FIG. 3.
FIG. 3.

PL spectra of InN MQWs (solid line) and a thickness InN epilayer (dashed line).


Generic image for table
Table I.

Structural parameters, the In contents in the InGaN barriers and lattice relaxations (i.e., strains) in the well/barrier determined from the simulation of scans. Lattice relaxation of the layer was defined by the percentage relaxation parallel to the interface as , where is the lattice constant of the layer. and are the lattice constant when the layer is fully relaxed and that of the bottom layer.


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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Fine-structure N-polarity InN∕InGaN multiple quantum wells grown on GaN underlayer by molecular-beam epitaxy