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Fine-structure N-polarity multiple quantum wells grown on GaN underlayer by molecular-beam epitaxy
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10.1063/1.1954877
/content/aip/journal/apl/86/26/10.1063/1.1954877
http://aip.metastore.ingenta.com/content/aip/journal/apl/86/26/10.1063/1.1954877
/content/aip/journal/apl/86/26/10.1063/1.1954877
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/content/aip/journal/apl/86/26/10.1063/1.1954877
2005-06-20
2014-07-24
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Fine-structure N-polarity InN∕InGaN multiple quantum wells grown on GaN underlayer by molecular-beam epitaxy
http://aip.metastore.ingenta.com/content/aip/journal/apl/86/26/10.1063/1.1954877
10.1063/1.1954877
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