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Schematic diagram of an experimental setup.
Current/voltage characteristic of a measured sample.
Emission intensity distribution in polycrystalline Si cell under the forward bias. A schematic viewgraph of the sample is inset.
Distribution of the minority carrier diffusion length in the cell shown in Fig. 3 measured by the LBIC method.
Emission intensity as a function of the diffusion length at the corresponding measurement points. Solid lines are the fitting lines by the least-squares method.
Typical emission spectrum.
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