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Junction and carrier temperature measurements in deep-ultraviolet light-emitting diodes using three different methods
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10.1063/1.1849838
/content/aip/journal/apl/86/3/10.1063/1.1849838
http://aip.metastore.ingenta.com/content/aip/journal/apl/86/3/10.1063/1.1849838
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

(a) Current–voltage curve and (b) emission spectra under pulsed and dc condition for AlGaN deep UV LED.

Image of FIG. 2.
FIG. 2.

(a) Experimental forward voltage and (b) peak position vs oven temperature for different pulsed injection currents. The dashed line is a linear fit to the experimental data.

Image of FIG. 3.
FIG. 3.

Junction temperature as a function of dc forward current for an AlGaN deep UV LED. Also shown is a linear fit for the experimental data (dashed line).

Image of FIG. 4.
FIG. 4.

Junction temperature as a function of dc forward current for an AlGaN deep UV LED for different packaging conditions. Also shown is a linear fit for the experimental data (dashed line).

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/content/aip/journal/apl/86/3/10.1063/1.1849838
2005-01-11
2014-04-24
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Junction and carrier temperature measurements in deep-ultraviolet light-emitting diodes using three different methods
http://aip.metastore.ingenta.com/content/aip/journal/apl/86/3/10.1063/1.1849838
10.1063/1.1849838
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