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Crack-free fully epitaxial nitride microcavity using highly reflective AlInN∕GaN Bragg mirrors
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10.1063/1.1849851
/content/aip/journal/apl/86/3/10.1063/1.1849851
http://aip.metastore.ingenta.com/content/aip/journal/apl/86/3/10.1063/1.1849851

Figures

Image of FIG. 1.
FIG. 1.

Symbols correspond to reflectivity measured using ∕GaN (cf. references in Table I) or AlInN∕GaN DBRs. Full lines are calculated peak reflectivities for various refractive index contrasts .

Image of FIG. 2.
FIG. 2.

(a) SEM image of a GaN microcavity surrounded by two AlInN∕GaN DBRs. (b) Scaled-up SEM image of the GaN cavity showing the abrupt AlInN∕GaN interfaces.

Image of FIG. 3.
FIG. 3.

XRD mapping in the reciprocal space of the reflections of a GaN∕AlInN microcavity grown on GaN∕sapphire template.

Image of FIG. 4.
FIG. 4.

(a) RT reflectivity and transmission spectra of an AlInN∕GaN based microcavity. (b) Transmission spectrum of the cavity mode.

Tables

Generic image for table
Table I.

Al content, refractive index contrast, number of periods, and peak reflectivity of various AlGaN∕GaN DBRs from the literature. These values are reported in Fig. 1.

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/content/aip/journal/apl/86/3/10.1063/1.1849851
2005-01-11
2014-04-17
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Crack-free fully epitaxial nitride microcavity using highly reflective AlInN∕GaN Bragg mirrors
http://aip.metastore.ingenta.com/content/aip/journal/apl/86/3/10.1063/1.1849851
10.1063/1.1849851
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