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Symbols correspond to reflectivity measured using ∕GaN (cf. references in Table I) or AlInN∕GaN DBRs. Full lines are calculated peak reflectivities for various refractive index contrasts .
(a) SEM image of a GaN microcavity surrounded by two AlInN∕GaN DBRs. (b) Scaled-up SEM image of the GaN cavity showing the abrupt AlInN∕GaN interfaces.
XRD mapping in the reciprocal space of the reflections of a GaN∕AlInN microcavity grown on GaN∕sapphire template.
(a) RT reflectivity and transmission spectra of an AlInN∕GaN based microcavity. (b) Transmission spectrum of the cavity mode.
Al content, refractive index contrast, number of periods, and peak reflectivity of various AlGaN∕GaN DBRs from the literature. These values are reported in Fig. 1.
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