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Investigation of the initial stage of growth of films on Si(100) grown by atomic-layer deposition using in situ medium energy ion scattering
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10.1063/1.1850596
/content/aip/journal/apl/86/3/10.1063/1.1850596
http://aip.metastore.ingenta.com/content/aip/journal/apl/86/3/10.1063/1.1850596
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

MEIS spectra of Hf atoms for layers grown on a thermal oxide. ALD growth deviates from ideal linear growth behavior at the initial stage because of island-like growth contribution.

Image of FIG. 2.
FIG. 2.

MEIS spectra of Si atoms for the layers grown on a thermal oxide. After , the leading edge of the Si peak is moved and the first 1 ML is completely formed. A small shoulder (indicated by the arrow) is observed, which is an indication of slight silicate formation.

Image of FIG. 3.
FIG. 3.

Hf coverage, measured by in situ MEIS, as a function of the number of deposition cycles, for the thermal oxide. The inset shows the calculated maximum island height obtained from simulation.

Image of FIG. 4.
FIG. 4.

A model for the growth mechanism of an ALD layer grown on a thermal oxide at the initial growth stage. Island-like growth occurs at the initial stage and the growth then follows a slightly deviated ideal linear growth behavior.

Image of FIG. 5.
FIG. 5.

(a) High-resolution XPS result of Hf binding energy. (b) Compositional depth profile for a on thermal oxide. The slight silicate formation is localized at the interface region.

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/content/aip/journal/apl/86/3/10.1063/1.1850596
2005-01-10
2014-04-19
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Investigation of the initial stage of growth of HfO2 films on Si(100) grown by atomic-layer deposition using in situ medium energy ion scattering
http://aip.metastore.ingenta.com/content/aip/journal/apl/86/3/10.1063/1.1850596
10.1063/1.1850596
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