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MEIS spectra of Hf atoms for layers grown on a thermal oxide. ALD growth deviates from ideal linear growth behavior at the initial stage because of island-like growth contribution.
MEIS spectra of Si atoms for the layers grown on a thermal oxide. After , the leading edge of the Si peak is moved and the first 1 ML is completely formed. A small shoulder (indicated by the arrow) is observed, which is an indication of slight silicate formation.
Hf coverage, measured by in situ MEIS, as a function of the number of deposition cycles, for the thermal oxide. The inset shows the calculated maximum island height obtained from simulation.
A model for the growth mechanism of an ALD layer grown on a thermal oxide at the initial growth stage. Island-like growth occurs at the initial stage and the growth then follows a slightly deviated ideal linear growth behavior.
(a) High-resolution XPS result of Hf binding energy. (b) Compositional depth profile for a on thermal oxide. The slight silicate formation is localized at the interface region.
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