1887
banner image
No data available.
Please log in to see this content.
You have no subscription access to this content.
No metrics data to plot.
The attempt to load metrics for this article has failed.
The attempt to plot a graph for these metrics has failed.
Investigation of the initial stage of growth of films on Si(100) grown by atomic-layer deposition using in situ medium energy ion scattering
Rent:
Rent this article for
USD
10.1063/1.1850596
/content/aip/journal/apl/86/3/10.1063/1.1850596
http://aip.metastore.ingenta.com/content/aip/journal/apl/86/3/10.1063/1.1850596
/content/aip/journal/apl/86/3/10.1063/1.1850596
Loading

Data & Media loading...

Loading

Article metrics loading...

/content/aip/journal/apl/86/3/10.1063/1.1850596
2005-01-10
2014-07-23
Loading

Full text loading...

This is a required field
Please enter a valid email address
This feature is disabled while Scitation upgrades its access control system.
This feature is disabled while Scitation upgrades its access control system.
752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Investigation of the initial stage of growth of HfO2 films on Si(100) grown by atomic-layer deposition using in situ medium energy ion scattering
http://aip.metastore.ingenta.com/content/aip/journal/apl/86/3/10.1063/1.1850596
10.1063/1.1850596
SEARCH_EXPAND_ITEM