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Properties of nonpolar -plane InGaN∕GaN multiple quantum wells grown on lateral epitaxially overgrown -plane GaN
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The properties of nonpolar -plane InGaN∕GaN multiple-quantum wells(MQWs),grown simultaneously on lateral epitaxially overgrown (LEO) -plane GaN and planar -plane GaN, were studied. High-resolution x-ray diffraction analysis revealed that the In mol fraction in the MQWsgrown on LEO-GaN was significantly lower than that on planar -plane GaN. The lower In incorporation was confirmed by microphotoluminescence (μ-PL) and wide-area photoluminescence measurements, which showed a redshift of the MQW emission from 413 nm for the nearly defect-free laterally overgrown regions to 453 nm for the defective “window” regions of the LEO -plane GaN, to 478 nm for the high-defect density planar -plane GaN. μ-PL measurements also demonstrated that the emission from the nearly defect-free wings of the LEO -plane GaN was more than ten times stronger than the emission from the defective windows.
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