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Properties of nonpolar -plane InGaN∕GaN multiple quantum wells grown on lateral epitaxially overgrown -plane GaN
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10.1063/1.1851007
/content/aip/journal/apl/86/3/10.1063/1.1851007
http://aip.metastore.ingenta.com/content/aip/journal/apl/86/3/10.1063/1.1851007
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

HRXRD scans for the InGaN∕GaN MQWs grown in the same growth run on (a) LEO -plane GaN, and (b) planar -plane GaN template.

Image of FIG. 2.
FIG. 2.

AFM micrograph showing the surface morphology in the Ga-face wing, -face wing, and the window regions of the LEO sample .

Image of FIG. 3.
FIG. 3.

(Color) Contour plot of the μ-PL intensity on the wing and window regions of the LEO sample as a function of the wavelength (the intensity is plotted in a logarithmic scale).

Image of FIG. 4.
FIG. 4.

(Color online) (a) μ-PL measurements on the Ga-face wing, -face wing, and the window region of the LEO sample; (b) Wide-area PL measurement on the LEO sample and the planar -plane sample.

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/content/aip/journal/apl/86/3/10.1063/1.1851007
2005-01-07
2014-04-18
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Properties of nonpolar a-plane InGaN∕GaN multiple quantum wells grown on lateral epitaxially overgrown a-plane GaN
http://aip.metastore.ingenta.com/content/aip/journal/apl/86/3/10.1063/1.1851007
10.1063/1.1851007
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