1887
banner image
No data available.
Please log in to see this content.
You have no subscription access to this content.
No metrics data to plot.
The attempt to load metrics for this article has failed.
The attempt to plot a graph for these metrics has failed.
The full text of this article is not currently available.
f
Properties of nonpolar -plane InGaN∕GaN multiple quantum wells grown on lateral epitaxially overgrown -plane GaN
Rent:
Rent this article for
Access full text Article
/content/aip/journal/apl/86/3/10.1063/1.1851007
1.
1.T. Takeuchi, S. Sota, M. Katsuragawa, M. Komori, H. Takeuchi, H. Amano, and I. Akasaki, Jpn. J. Appl. Phys., Part 2 Part 2 36, L382 (1997).
http://dx.doi.org/10.1143/JJAP.36.L382
2.
2.F. Bernardini, V. Fiorentini, and D. Vanderbilt, Phys. Rev. B 56, R10024 (1997).
http://dx.doi.org/10.1103/PhysRevB.56.R10024
3.
3.P. Waltereit, O. Brandt, A. Trampert, H. T. Grahn, J. Menniger, M. Ramsteiner, M. Reiche, and K. H. Ploog, Nature (London) 406, 865 (2000).
http://dx.doi.org/10.1038/35022529
4.
4.H. M. Ng, Appl. Phys. Lett. 80, 4369 (2002).
http://dx.doi.org/10.1063/1.1484543
5.
5.M. D. Craven, P. Waltereit, F. Wu, J. S. Speck, and S. P. DenBaars, Jpn. J. Appl. Phys., Part 2, 42, L235 (2003).
http://dx.doi.org/10.1143/JJAP.42.L235
6.
6.Y. J. Sun, O. Brandt, S. Cronenberg, S. Dhar, H. T. Grahn, K. H. Ploog, P. Waltereit, and J. S. Speck, Phys. Rev. B 67, 041306 (2003).
http://dx.doi.org/10.1103/PhysRevB.67.041306
7.
7.A. Chakraborty, B. A. Haskell, S. Keller, J. S. Speck, S. P. DenBaars, S. Nakamura, and U. K. Mishra, Appl. Phys. Lett. 85, 5143 (2004).
http://dx.doi.org/10.1063/1.1825612
8.
8.S. Nakamura and G. Fasol, The Blue Laser Diode (Springer, Heidelberg, 1997).
9.
9.M. D. Craven, S. H. Lim, F. Wu, J. S. Speck, and S. P. DenBaars, Appl. Phys. Lett. 81, 469 (2002).
http://dx.doi.org/10.1063/1.1493220
10.
10.M. D. Craven, F. Wu, A. Chakraborty, B. Imer, U. K. Mishra, S. P. DenBaars, and J. S. Speck, Appl. Phys. Lett. 84, 1281 (2004).
http://dx.doi.org/10.1063/1.1650545
11.
11.M. D. Craven, S. H. Lim, F. Wu, J. S. Speck, and S. P. DenBaars, Appl. Phys. Lett. 81, 1201 (2002).
http://dx.doi.org/10.1063/1.1498010
12.
12.B. A. Haskell, F. Wu, M. D. Craven, S. Matsuda, P. T. Fini, T. Fujii, K. Fujito, S. P. DenBaars, J. S. Speck, and S. Nakamura, Appl. Phys. Lett. 83, 644 (2003).
http://dx.doi.org/10.1063/1.1593817
13.
13.T. Koida, S. F. Chichibu, T. Sota, M. D. Craven, B. A. Haskell, J. S. Speck, S. P. DenBaars, and S. Nakamura, Appl. Phys. Lett. 84, 3768 (2004).
http://dx.doi.org/10.1063/1.1738185
14.
14.C. Chen, M. Shatalov, E. Kuokstis, V. Adivarahan, M. Gaevski, S. Rai, and M. A. Khan, Jpn. J. Appl. Phys., Part 2, Part 2 43, L1099 (2004).
15.
15.X. H. Wu, C. R. Elsass, A. Abare, M. Mack, S. Keller, P. M. Petroff, S. P. DenBaars, J. S. Speck, and S. J. Rosner, Appl. Phys. Lett. 72, 692 (1998).
http://dx.doi.org/10.1063/1.120844
http://aip.metastore.ingenta.com/content/aip/journal/apl/86/3/10.1063/1.1851007
Loading
/content/aip/journal/apl/86/3/10.1063/1.1851007
Loading

Data & Media loading...

Loading

Article metrics loading...

/content/aip/journal/apl/86/3/10.1063/1.1851007
2005-01-07
2014-10-31

Abstract

The properties of nonpolar -plane InGaN∕GaN multiple-quantum wells(MQWs),grown simultaneously on lateral epitaxially overgrown (LEO) -plane GaN and planar -plane GaN, were studied. High-resolution x-ray diffraction analysis revealed that the In mol fraction in the MQWsgrown on LEO-GaN was significantly lower than that on planar -plane GaN. The lower In incorporation was confirmed by microphotoluminescence (μ-PL) and wide-area photoluminescence measurements, which showed a redshift of the MQW emission from 413 nm for the nearly defect-free laterally overgrown regions to 453 nm for the defective “window” regions of the LEO -plane GaN, to 478 nm for the high-defect density planar -plane GaN. μ-PL measurements also demonstrated that the emission from the nearly defect-free wings of the LEO -plane GaN was more than ten times stronger than the emission from the defective windows.

Loading

Full text loading...

/deliver/fulltext/aip/journal/apl/86/3/1.1851007.html;jsessionid=2mv6h6l6uwblx.x-aip-live-02?itemId=/content/aip/journal/apl/86/3/10.1063/1.1851007&mimeType=html&fmt=ahah&containerItemId=content/aip/journal/apl
true
true
This is a required field
Please enter a valid email address
752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Properties of nonpolar a-plane InGaN∕GaN multiple quantum wells grown on lateral epitaxially overgrown a-plane GaN
http://aip.metastore.ingenta.com/content/aip/journal/apl/86/3/10.1063/1.1851007
10.1063/1.1851007
SEARCH_EXPAND_ITEM