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-doped nanowire electric field-effect transistors fabricated by suspended molecular template method
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View: Figures


Image of FIG. 1.
FIG. 1.

(Color online) The fabricated -doped nanowire by suspended templated method. (a) Suspended PEDOT nanowires as a template, (b) transmission electron microscopy images of the -doped nanowire bundles and enlarged portion near the surface of a wire, (c) EDS spectrum of nanowire showing characteristic peaks for and . The atomic percent is about as an average value of several measurements.

Image of FIG. 2.
FIG. 2.

(Color online) (a) A suspended nanowire junction between electrodes. Inset figure represents the suspended molecular template junction before fabrication of nanowire. (b) Room temperature channel current vs drain-source voltage characteristics. In the low bias regime the figure shows that the device has ohmic contact properties with relatively high current levels.

Image of FIG. 3.
FIG. 3.

(Color online) (a) Drain-to-source conduction slightly below saturation as a function of , (b) saturation of the as a function of the for the channel in the region of high bias, and (c) response characteristics of transistors with change of . Typical -channel FET characteristics were shown.


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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Co-doped TiO2 nanowire electric field-effect transistors fabricated by suspended molecular template method