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The structure of polysiloxane PSX3.
(a) Experimental setup. L1, L2: Laser diodes; optical retarders; : polarizers; : shutters; BS: beam splitters; : detectors. (b) Detail of the sample geometry.
Diffraction efficiency as a function of time . Four writing cycles (starting at about 0, 50, 100, and 160 s, respectively) and three erasing processes are shown. At about 30 and 80 s, one of the two writing beams was blocked, respectively. At about 130 s (160 s), the applied voltage was switched off (on). The inset in the lower diagram shows the intermediate rise and decay of in detail which appears when the external field is switched off.
The gain (a) and rise time (b) as a function of applied voltage.
The gain (+) and rise time (●) as a function of mean power density of the writing beams (at an applied field of 12 V∕μm).
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