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Investigation of plasma hydrogenation and trapping mechanism for layer transfer
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10.1063/1.1852087
/content/aip/journal/apl/86/3/10.1063/1.1852087
http://aip.metastore.ingenta.com/content/aip/journal/apl/86/3/10.1063/1.1852087

Figures

Image of FIG. 1.
FIG. 1.

RBS channeling results for sample Nos. 2, 2a, 3, and 3a described in Table I, before hydrogenation. The spectra were obtained with a 2.0 MeV helium ion beam and a detector located at 13 deg from the incident beam. The helium beam was aligned along the axial direction. Also shown for comparison are a random spectrum obtained from the untreated silicon substrate.

Image of FIG. 2.
FIG. 2.

Cross-section transmission electron micrographs obtained from the high dose preimplanted sample after hydrogenation for 1.5 h at 350 °C: (a) without activation annealing, and (b) with activation annealing. Bright-field images, with 220 Bragg condition satisfied.

Image of FIG. 3.
FIG. 3.

Cross-sectional transmission electron micrographs obtained from the medium dose preimplanted sample after hydrogenation for 1.5 h at 350 °C: (a) without activation annealing, and (b) with activation annealing. Bright-field images, with 220 Bragg condition satisfied.

Tables

Generic image for table
Table I.

Summary of surface blistering results for activated and unactivated samples implanted with three different boron doses. The onset time, that is, time when surface blistering begins to emerge, is also shown here for two hydrogenation temperatures.

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/content/aip/journal/apl/86/3/10.1063/1.1852087
2005-01-07
2014-04-21
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Investigation of plasma hydrogenation and trapping mechanism for layer transfer
http://aip.metastore.ingenta.com/content/aip/journal/apl/86/3/10.1063/1.1852087
10.1063/1.1852087
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