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Influence of the gate leakage current on the stability of organic single-crystal field-effect transistors
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View: Figures


Image of FIG. 1.
FIG. 1.

Current-voltage characteristics of an organic single-crystal FET, with tetracene as the organic molecule and type I as the gate insulator.

Image of FIG. 2.
FIG. 2.

(a) Transfer characteristics of a FET on . The source and drain current ( and ), are equal and opposite, since the leakage current is orders of magnitude smaller than (see inset). Device degradation is responsible for the nonmonotonic curve, resulting in the full suppression of at high . (b) Transfer characteristics of a tetracene FET on . The relation is nonlinear and and are lower in the second sweep (open circles) than in the first sweep (closed circles). (triangles) is much smaller than and . Note that the shape of the curves is characteristic for and differs from that of . For comparison, (c) shows the transfer characteristics of a tetracene FET on for which and are linearly related to .

Image of FIG. 3.
FIG. 3.

curves (closed symbols) of two rubrene FETs on type I (upper panel) and type II (lower panel) ( in both cases). The open symbols represent the leakage current. The degradation-induced, nonmonotonic behavior of the curve observed for the type I FET is absent in the type II device. Note that the leakage current in the two devices differs by orders of magnitude, despite the comparable crystal surface area and thickness . The inset shows that FETs on type II exhibit hysteresis-free electrical characteristics.


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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Influence of the gate leakage current on the stability of organic single-crystal field-effect transistors