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Role of silicon interstitials in boron cluster dissolution
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Image of FIG. 1.
FIG. 1.

Simulated and experimental (Ref. 11) time evolution of the active dose during the second step anneal at 850 °C in inert and oxidizing ambient, for a 20 keV, implant.

Image of FIG. 2.
FIG. 2.

Simulated and experimental (Ref. 16) sheet resistance and junction depth as a function of the annealing temperature for a 0.5 keV, implant in preamorphized silicon, after 10 s anneals performed after the regrowth of the amorphous layer.

Image of FIG. 3.
FIG. 3.

Time evolution of the Si interstitial dose stored in EOR defects and the active dose during annealing at 750 and 850 °C, for a 0.5 keV, implant in preamorphized silicon. The time to start reactivation is correlated with the time for Si interstitial defect dissolution at the EOR damage region.

Image of FIG. 4.
FIG. 4.

Simulated and experimental (Ref. 17) values for the sheet resistance for a 1.5 keV, implants in preamorphized Si annealed at different temperatures for 1 min. The preamorphizing implants were Ge at energies of 8, 12, and 25 keV, corresponding to amorphizing depths of 14, 22, and 42 nm, respectively.


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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Role of silicon interstitials in boron cluster dissolution