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Concentration and ion-energy-independent annealing kinetics during ion-implanted-defect annealing
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10.1063/1.1852733
/content/aip/journal/apl/86/3/10.1063/1.1852733
http://aip.metastore.ingenta.com/content/aip/journal/apl/86/3/10.1063/1.1852733
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Figures

Image of FIG. 1.
FIG. 1.

(a) Rate of heat released by poly-Si implanted with 30 keV at indicated fluences. (b) Signals normalized by a factor proportional to the total heat released between 100 and 400 °C. Inset: melting peak of a 20 nm Sn layer, plotted on the same temperature scale as the data.

Image of FIG. 2.
FIG. 2.

Heat released between 150 and 400 °C by poly-Si implanted with 30 keV (●), 15 keV (엯), and 15 keV (▵) as a function of fluence. The heat release is normalized to the number of atoms in the implanted region. Dashed curve: see the text. The inset shows the same data not normalized, and on a linear fluence scale.

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/content/aip/journal/apl/86/3/10.1063/1.1852733
2005-01-12
2014-04-25
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Concentration and ion-energy-independent annealing kinetics during ion-implanted-defect annealing
http://aip.metastore.ingenta.com/content/aip/journal/apl/86/3/10.1063/1.1852733
10.1063/1.1852733
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