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Anomalous behaviors of deep level defects in 6H silicon carbide
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10.1063/1.1853523
/content/aip/journal/apl/86/3/10.1063/1.1853523
http://aip.metastore.ingenta.com/content/aip/journal/apl/86/3/10.1063/1.1853523
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

DLTS spectra for the He-implanted, 1.7 and electron-irradiated samples with different annealing conditions. A rate window of was used in the measurements.

Image of FIG. 2.
FIG. 2.

Peak intensities of as a function of annealing temperature for the He-implanted, 0.3 and electron-irradiated samples.

Image of FIG. 3.
FIG. 3.

DLTS spectra (left) and peak intensities (right) of and of the 1.7 and as-electron-irradiated samples as a function of filling pulse width .

Image of FIG. 4.
FIG. 4.

DLTS spectra for the annealed He-implanted sample with , rate and filling pulse . The proposed peak causing the anomalous parameters of is highlighted by arrow. The inset shows the Arrhenius plots for and the new defect.

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/content/aip/journal/apl/86/3/10.1063/1.1853523
2005-01-07
2014-04-23
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Anomalous behaviors of E1∕E2 deep level defects in 6H silicon carbide
http://aip.metastore.ingenta.com/content/aip/journal/apl/86/3/10.1063/1.1853523
10.1063/1.1853523
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