1887
banner image
No data available.
Please log in to see this content.
You have no subscription access to this content.
No metrics data to plot.
The attempt to load metrics for this article has failed.
The attempt to plot a graph for these metrics has failed.
Recording of cell action potentials with field-effect transistors
Rent:
Rent this article for
USD
10.1063/1.1853531
/content/aip/journal/apl/86/3/10.1063/1.1853531
http://aip.metastore.ingenta.com/content/aip/journal/apl/86/3/10.1063/1.1853531
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

Cardiac mycoyte syncytium cultivated on the device surface of a EGFET array.

Image of FIG. 2.
FIG. 2.

Transconductance of a single EGFET as a function of gate-source voltage for different drain-source voltages.

Image of FIG. 3.
FIG. 3.

(a) Typical noise power density spectrum of a single EGFET element at . A dependence with is observed. (b) Variation of the noise power spectral density as a function of for different frequencies. Lowest noise levels were observed at the highest transconductance of the devices.

Image of FIG. 4.
FIG. 4.

Transient response of a single EGFET element to a pulse applied for via the electrolyte gate.

Image of FIG. 5.
FIG. 5.

Extracellular potential of a spontaneously beating cardiac myocyte syncytium recorded with an EGFET. The cells were cultivated on the device surface.

Loading

Article metrics loading...

/content/aip/journal/apl/86/3/10.1063/1.1853531
2005-01-12
2014-04-17
Loading

Full text loading...

This is a required field
Please enter a valid email address
752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Recording of cell action potentials with AlGaN∕GaN field-effect transistors
http://aip.metastore.ingenta.com/content/aip/journal/apl/86/3/10.1063/1.1853531
10.1063/1.1853531
SEARCH_EXPAND_ITEM