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Highly linear and efficient phase modulators based on GaInAsP-InP three-step quantum wells
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10.1063/1.1854219
/content/aip/journal/apl/86/3/10.1063/1.1854219
http://aip.metastore.ingenta.com/content/aip/journal/apl/86/3/10.1063/1.1854219
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

Energy band structure of a 3SQW at an external electric field of 60 kV∕cm. Calculated first and second electron wave functions as well as the heavy and light-hole wave functions are shown.

Image of FIG. 2.
FIG. 2.

Difference in average position of electron and hole in their lowest state (left axis), and their wave function overlap integral (right axis) for 3SQW and RQW structures.

Image of FIG. 3.
FIG. 3.

Measured change of index vs the applied reverse bias at different wavelengths for a linearized phase modulator.

Image of FIG. 4.
FIG. 4.

Change of index vs reverse bias values for a linearized 3SQW modulator compared to a conventional RQW modulator at for TE polarization. The linear-quadratic ration is indicated for each trace.

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/content/aip/journal/apl/86/3/10.1063/1.1854219
2005-01-10
2014-04-17
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Highly linear and efficient phase modulators based on GaInAsP-InP three-step quantum wells
http://aip.metastore.ingenta.com/content/aip/journal/apl/86/3/10.1063/1.1854219
10.1063/1.1854219
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