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Adjustable optical anisotropy in porous GaAs
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10.1063/1.1849846
/content/aip/journal/apl/86/4/10.1063/1.1849846
http://aip.metastore.ingenta.com/content/aip/journal/apl/86/4/10.1063/1.1849846
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

(a), (b) SEM images of the porous GaAs layer with crystallographic pores; (c) the schematic drawing showing the pore lattices accounted for by the model for the case of porous GaAs electrochemically etched on (100) oriented substrates, and (d) the coordinate system associated with the pore lattice.

Image of FIG. 2.
FIG. 2.

Numerically calculated dielectric tensor elements of the porous GaAs with crystallographic pores etched on (100)-oriented substrate as a function of the relative filling fraction of one of the pore lattice pairs: (a) general view; (b) magnified view near the 50% filling fraction. The overall porosity of the sample is 30%. Dashed lines indicate the results of calculations for the case of the pores with circular cross section, solid lines indicate the results of calculations taking into account the triangular cross sections of crystallographic pores in GaAs.

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/content/aip/journal/apl/86/4/10.1063/1.1849846
2005-01-19
2014-04-25
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Adjustable optical anisotropy in porous GaAs
http://aip.metastore.ingenta.com/content/aip/journal/apl/86/4/10.1063/1.1849846
10.1063/1.1849846
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