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Quasiballistic transport of hot holes in GaAs submicron channels
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10.1063/1.1851003
/content/aip/journal/apl/86/4/10.1063/1.1851003
http://aip.metastore.ingenta.com/content/aip/journal/apl/86/4/10.1063/1.1851003
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

and dependences of the device . The inset shows the layout of the device with its constriction and contacts.

Image of FIG. 2.
FIG. 2.

A schematic diagram showing how steps appear in at voltage intervals of . Here, is the voltage drop across the constriction, and is the small additional voltage generated close to the end of the constriction due to space-charge build-up.

Image of FIG. 3.
FIG. 3.

Magnetic field dependence of . The upper inset shows the ballistic motion in the presence of crossed electric and magnetic fields of a typical hole entering the middle of the constriction. The right-hand inset shows the quenching of the amplitude of the first LO-phonon peak in in more detail. Curves are offset along the vertical axis for clarity.

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/content/aip/journal/apl/86/4/10.1063/1.1851003
2005-01-18
2014-04-16
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Quasiballistic transport of hot holes in GaAs submicron channels
http://aip.metastore.ingenta.com/content/aip/journal/apl/86/4/10.1063/1.1851003
10.1063/1.1851003
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